Structure of Si(100)-(2 x 1) surface using UHV transmission electron diffraction.

نویسندگان

  • Jayaram
  • Xu
  • Marks
چکیده

Details of the atomic structure for the Si(100)-(2X1) surface using UHV transmission electron diffraction are described. Reliability factor minimizations of the dynamical diffraction intensities establish conclusively the asymmetry in the structure. Fits performed using multilayer subsurface relaxations to match analytical strain solutions demonstrate the existence of long range subsurface strain fields extending up to six layers into the bulk.

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عنوان ژورنال:
  • Physical review letters

دوره 71 21  شماره 

صفحات  -

تاریخ انتشار 1993